Band edges, fermi level position, and hydrogen concentration in surface near regions of a-Si:H
- 1 December 1983
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 59-60, 329-332
- https://doi.org/10.1016/0022-3093(83)90587-2
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Static Charge Fluctuations in Amorphous SiliconPhysical Review Letters, 1982
- Electronic states and bonding configurations in hydrogenated amorphous siliconPhysical Review B, 1980
- Electron-spectroscopic studies of the early stages of the oxidation of SiPhysical Review B, 1979
- Core Excitons and the Soft-X-Ray Threshold of SiliconPhysical Review Letters, 1972
- Close Similarity between Photoelectric Yield and Photoabsorption Spectra in the Soft-X-Ray RangePhysical Review Letters, 1972
- Extreme Ultraviolet Transmission of Crystalline and Amorphous SiliconPhysical Review Letters, 1972
- Band Structure of Silicon from an Adjusted Heine-Abarenkov CalculationPhysical Review B, 1966