Impurity band conduction in cesium adsorbed n-channel Si inversion layers
- 1 August 1976
- journal article
- Published by Elsevier in Surface Science
- Vol. 58 (1) , 33-41
- https://doi.org/10.1016/0039-6028(76)90109-6
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967
- Electric Conduction in Phosphorus Doped Silicon at Low TemperaturesJournal of the Physics Society Japan, 1967
- Energy Structure in Photoelectric Emission from Cs-Covered Silicon and GermaniumPhysical Review B, 1966
- Resistivity and Hall Effect of Germanium at Low TemperaturesPhysical Review B, 1954
- Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and PhosphorusPhysical Review B, 1949