Electrodeposition of Silicon from a Nonaqueous Solvent
- 1 January 1988
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 135 (1) , 109-112
- https://doi.org/10.1149/1.2095532
Abstract
Electroplating of silicon from solutions of , , , , , , and in tetrahydrofuran, using , TBAP, or TBAB as supporting electrolyte has been studied Si‒C, Si‒O, and Si‒N bonds are not reduced. Cyclic voltammetry shows a reduction peak, followed by passivation, for the halogenosilanes. Potentiostatic and galvanostatic deposition on Pt, Au, Ni, Cu glassy carbon, or ITO glass yields smooth layers up to 0.25 μm. Thicker layers have cracks. Auger spectroscopy shows C (∼8), O (∼8), and Cl (∼1.5) as impurities (atomic percent).Keywords
This publication has 0 references indexed in Scilit: