Correct evaluation of ohmic contacts to p -CdTe thin films

4 March 1993

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 29 (5) , 438-440
https://doi.org/10.1049/el:19930293

Abstract

Sometimes it is very difficult to characterise the ohmicity of the metal–semiconductor contact using transmission line model (TLM) measurements, particularly for the semiconductor for having a high workfunction. The TLM data are insufficient for polycrystalline films because of the presence of the grain boundary potential which scatters the carriers during their flow along the horizontal direction. Thus the measurement needs modifications in order to obtain the precise value of bulk resistivity ρ_B (Ω cm) specific contact ρ_c (Ω/cm²) and end resistance R_E (Ω). In the Letter a method is prescribed for determining the exact value of ρ_B, ρ_c and R_E. This method is very simple and can be adopted by laboratories lacking high grade instrumentation.

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