High-performance quasi-optical GaAs monolithic mixer at 110 GHz
- 1 February 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 28 (2) , 155-157
- https://doi.org/10.1109/t-ed.1981.20302
Abstract
A novel GaAs monolithic integrated circuit mixer has been fabricated which is impedance matched to fundamental waveguide. It consists of a slot coupler, coplanar transmission line, surface-oriented Schottky-barrier diode, and RF bypass capacitor monolithically integrated on the GaAs surface. At 110 GHz, a monolithic mixer module mounted in the end of a waveguide horn has an uncooled double-sideband (DSB) mixer noise temperature of 339 K and conversion loss of 3.8 dB.Keywords
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