High sensitivity InP/InGaAs heterojunction phototransistor
- 28 August 1980
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 16 (18) , 713-714
- https://doi.org/10.1049/el:19800506
Abstract
Back-illuminated InP/InGaAs heterojunction phototransistors are described. These devices exhibit a low-level optical gain of 40 at 1 nW of incident power which represents a 1000 × improvement in sensitivity over previously reported phototransistors. The maximum gain is 1000 at 5 μW input. The response is relatively flat from 0.95 μm to 1.65 μm wavelength.Keywords
This publication has 1 reference indexed in Scilit:
- LPE-Grown InGaAsP/InP heterojunction bipolar phototransistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1979