Analysis of Thin-Film Germanium Epitaxially Deposited onto Calcium Fluoride
- 1 August 1963
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 34 (8) , 2306-2308
- https://doi.org/10.1063/1.1702735
Abstract
An experimental investigation of the formation conditions of thin‐film Ge epitaxially deposited onto (111) surfaces of CaF2 and the resultant physical and electrical character is presented. The amorphous to crystalline transition region was found to be between 320° and 400°C, and the best single‐crystal orientation was found between 550° and 575°C. Average values of the mobility, conductivity, and the hole concentrations are also reported with an explanation of the problems encountered in their determination.This publication has 1 reference indexed in Scilit:
- Formation Conditions and Structure of Thin Epitaxial Germanium Films on Single-Crystal SubstratesJournal of Applied Physics, 1962