Novel silicon-on-insulator MOSFET for high-voltage integrated circuits

13 April 1989

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 25 (8) , 536-537
https://doi.org/10.1049/el:19890367

Abstract

A novel silicon-on-insulator MOSFET for high-voltage ICs is presented. Computer simulations are given to prove the high-voltage capability of the device structure. Also given is a practical implementation procedure.

Keywords

SOI DEVICE
MOSFET
HVIC
HV CAPABILITY
SIMULATIONS
IMPLEMENTATION PROCEDURE
HIGH-VOLTAGE INTEGRATED CIRCUITS
N-CHANNEL DEVICES
MOS IC
CMOS IC
P-CHANNEL DEVICES
DEVICE STRUCTURE
POWER IC

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