Resonant tunnelling in Ga 0.47 In 0.53 As/InP double-barrier structures grown by AP-MOCVD
- 17 March 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 24 (6) , 322-323
- https://doi.org/10.1049/el:19880217
Abstract
We report the first observation of negative-differential resistance in Ga0.47In0.53As/InP double-barrier structures grown by AP-MOCVD. The devices exhibit the largest peak/valley current ratios seen in this system; 1.2:1 (2.8:1) and 30:1 (5.5:1) at 77 K (4.2 K) for the n = 1 and n = 2 resonances respectively.Keywords
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