Effects of hydrogen and rf power on the structural and electrical properties of rf sputtered hydrogenated amorphous silicon carbide films
- 1 August 1996
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 80 (3) , 1611-1616
- https://doi.org/10.1063/1.362959
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
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