Gallium Incorporation Kinetics During GSMBE of GaN
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Surface chemistry evolution during molecular beam epitaxy growth of InGaAsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Growth of GaN(0001)1×1 on Al2O3(0001) by gas-source molecular beam epitaxyApplied Physics Letters, 1992
- Cation incorporation rate limitations in molecular-beam epitaxy: Effects of strain and surface compositionJournal of Vacuum Science & Technology B, 1989