Temperature dependence of band gap and photocurrent properties for the AgInS2 epilayers grown by hot wall epitaxy
- 1 November 2002
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 245 (3-4) , 261-266
- https://doi.org/10.1016/s0022-0248(02)01729-3
Abstract
No abstract availableKeywords
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