Molecular beam deposition of high quality silicon oxide dielectric films
- 2 March 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 148 (4) , 336-344
- https://doi.org/10.1016/0022-0248(94)00729-2
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Reactive chemical beam etching of InP inside a chemical beam epitaxial growth chamber using phosphorus trichlorideApplied Physics Letters, 1993
- Real-time in situ monitoring of antireflection coatings for semiconductor laser amplifiers by ellipsometryIEEE Photonics Technology Letters, 1992
- The growth of thin films with high thickness uniformity using ultrahigh vacuum molecular beam depositionJournal of Vacuum Science & Technology A, 1990
- Deposition and measurements of electron-beam-evaporated SiO/sub x/ antireflection coatings on InGaAsP injection laser facetsJournal of Lightwave Technology, 1988
- Theoretical analysis and fabrication of antireflection coatings on laser-diode facetsJournal of Lightwave Technology, 1985
- Optical properties of non-crystalline Si, SiO, SiOx and SiO2Journal of Physics and Chemistry of Solids, 1971
- Increasing the Far-Ultraviolet Reflectance of Silicon-Oxide-Protected Aluminum Mirrors by Ultraviolet IrradiationJournal of the Optical Society of America, 1963
- Stress Anisotropy in Silicon Oxide FilmsJournal of Applied Physics, 1963
- Optical Properties of Silicon Monoxide in the Wavelength Region from 024 to 140 Microns*Journal of the Optical Society of America, 1954
- Preparation, Structure, and Applications of Thin Films of Silicon Monoxide and Titanium DioxideJournal of the American Ceramic Society, 1950