Giant Optical Anisotropy of Semiconductor Heterostructures with No Common Atom and the Quantum-Confined Pockels Effect
- 26 August 1996
- journal article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 77 (9) , 1829-1832
- https://doi.org/10.1103/physrevlett.77.1829
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Room-temperature optically pumped blue-green vertical cavity surface emitting laserApplied Physics Letters, 1995
- On the design of polarization-insensitive optoelectronic devicesSemiconductor Science and Technology, 1995
- Evidences of non-commutativity and non-transitivity of band discontinuities in InP-Al(In)As-Ga(In)As heterostructuresSolid State Communications, 1993
- Fine structure of heavy excitons in GaAs/AlAs superlatticesPhysical Review B, 1992
- Band-offset transitivity in strained (001) heterointerfacesPhysical Review B, 1992
- Direct determination of the valence-band offsets at Ga0.47In0.53As/InP and InP/Ga0.47In0.53As heterostructures by ultraviolet photoemission spectroscopyApplied Physics Letters, 1992
- Theoretical approaches of semiconductor interfaces and of their defects : recent developmentsJournal de Physique III, 1991
- Theory of semiconductor superlattice electronic structureReviews of Modern Physics, 1990
- Band mixing in semiconductor superlatticesPhysical Review B, 1985
- Interband optical transitions in GaAs-As and InAs-GaSb superlatticesPhysical Review B, 1985