Plasma deposited hydrogenated carbon on GaAs and InP
- 1 May 1985
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 3 (3) , 900-903
- https://doi.org/10.1116/1.573343
Abstract
The properties of ‘‘diamondlike’’ carbon films grown by glow discharge 30 kHz plasma using methane are reported. The C ls XPS line shape of films showed localized hybrid carbon bonds ranging from as low as 40% to as high as 97% percent of the total carbon bonds. Infrared spectroscopy and N15 nuclear reaction profiling data indicated 35% to 42% hydrogen, depending inversely on deposition temperature. The deposition rate of films on Si falls off exponentially with substrate temperature, and nucleation does not occur above 200 °C on GaAs and InP. Optical data of the films showed band gap values of 2.0 to 2.4 eV increasing monotonically with methane flow rate.Keywords
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