20 dB contrast GaAs/AlGaAs multiple quantum-well nonresonant modulators
- 1 January 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 4 (1) , 31-33
- https://doi.org/10.1109/68.124866
Abstract
The authors report a successful fabrication of nonresonant GaAs/AlGaAs multiple quantum well (MQW) modulators with a contrast ratio of more than 20 dB and a wide bandwidth of 3 nm. The optical path, as long as 8 mu m, is attained by fabricating a high-purity thick MQW layer with a residual carrier concentration of less than 10/sup 14/ cm/sup -3/ and introducing a high-reflectivity AlAs/AlGaAs quarter-wavelength mirror. The driving wavelengths are located at the absorption edge, resulting in the low-absorption loss.Keywords
This publication has 8 references indexed in Scilit:
- A semi-empirical model for electroabsorption in GaAs/AlGaAs multiple quantum well modulator structuresIEEE Journal of Quantum Electronics, 1990
- Low-voltage multiple quantum well reflection modulator with on:off ratio > 100:1Electronics Letters, 1989
- Optical bistability in self-electro-optic effect devices with asymmetric quantum wellsApplied Physics Letters, 1989
- Amplitude and phase modulation in a 4μm-thick GaAs/AlGaAs multiple quantum well modulatorElectronics Letters, 1988
- Quantum-confined Stark effect in graded-gap quantum wellsJournal of Applied Physics, 1987
- Multiple quantum well reflection modulatorApplied Physics Letters, 1987
- Electric field dependence of optical absorption near the band gap of quantum-well structuresPhysical Review B, 1985
- 131 ps optical modulation in semiconductor multiple quantum wells (MQW's)IEEE Journal of Quantum Electronics, 1985