Effects of beam pressure ratios on film quality in MBE growth of ZnSe
- 2 February 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 81 (1-4) , 512-517
- https://doi.org/10.1016/0022-0248(87)90445-3
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Electrical and Photo-luminescence Properties of ZnSe Thin Films Grown by Molecular Beam Epitaxy: Substrate Temperature EffectJapanese Journal of Applied Physics, 1983
- Photoluminescence Properties of ZnSe Thin Films Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1981
- High Electron Mobility in Zinc Selenide Through Low-Temperature AnnealingJournal of Applied Physics, 1971
- Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and PhosphorusPhysical Review B, 1949