3.06 μm InGaAsSb/InPSb diode lasers grown by organometallic vapor-phase epitaxy
- 21 October 1991
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (17) , 2127-2129
- https://doi.org/10.1063/1.106101
Abstract
We have observed laser action at λ=3.06 μm in In0.77Ga0.23As0.74Sb0.26/InP0.7Sb0.3 double heterojunction, diode lasers, which were grown by organometallic vapor‐phase epitaxy. The maximum operating temperature was T=35 K, and typical threshold current densities were 200–330 A/cm2. At temperatures up to 35 K, the lasing wavelength decreased with increasing temperature owing to a band‐filling effect.Keywords
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