Dielectric Properties of Lead Zirconate Titanate Thin Film Fabricated on In2O3:Sn Substrate by Sol-Gel Method
- 1 September 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (9S) , 4163-4167
- https://doi.org/10.1143/jjap.32.4163
Abstract
Lead zirconate titanate (PZT) films with the composition of Pb(Zr x Ti1-x )O3 (x: 0.2-0.8) were fabricated by dip-coating methods. The sol was prepared using ethanolamine as a sol stabilizer. The substrate was In2O3:Sn (ITO) sputtered glass (Corning #7059). PZT was well crystallized by heating at 600°C. After heating, the interface between PZT and ITO was investigated in structural, chemical, and electrical respects. These tests revealed that there is no reaction layer or diffusion layer between the interface. The dielectric constant and loss factor of the films were measured against temperature. From the D-E hysteresis curves, the films were confirmed to be ferroelectric with P r=5 µC/cm2 and E c=85 kV/cm.Keywords
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