Explaining the dependences of the hole and electron mobilities in Si inversion layers
- 1 April 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 47 (4) , 718-724
- https://doi.org/10.1109/16.830985
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Understanding the differences in the effective-field dependence of electron and hole inversion layer mobilitiesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- On surface roughness-limited mobility in highly doped n-MOSFET'sIEEE Transactions on Electron Devices, 1999
- Subband structure and mobility of two-dimensional holes in strained Si/SiGe MOSFET’sPhysical Review B, 1998
- Efficient, numerically stable multibandk⋅ptreatment of quantum transport in semiconductor heterostructuresPhysical Review B, 1996
- Correlation between inversion layer mobility and surface roughness measured by AFMIEEE Electron Device Letters, 1996
- Monte Carlo study of electron transport in silicon inversion layersPhysical Review B, 1993
- Surface roughness at the Si(100)-interfacePhysical Review B, 1985
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- Quantum Spectroscopy of the Low-Field Oscillations in the Surface ImpedancePhysical Review B, 1968
- Polarizability of a Two-Dimensional Electron GasPhysical Review Letters, 1967