High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy
- 30 October 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (18) , 2888-2890
- https://doi.org/10.1063/1.1323856
Abstract
We report on the growth and transport properties of high-mobility two-dimensional electron gases (2DEGs) confined at the AlGaN/GaN interface grown by plasma-assisted molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy. We have grown samples over a broad range of electron densities ranging from ns=6.9×1011 to 1.1×1013 cm−2, and at T=4.2 K, observe a peak mobility of 53 300 cm2/V s at a density of 2.8×1012 cm−2. Magnetotransport studies on these samples display exceptionally clean signatures of the quantum Hall effect. Our investigation of the dependence of 2DEG mobility on carrier concentration suggests that the low-temperature mobility in our AlGaN/GaN heterostructures is currently limited by the interplay between charged dislocation scattering and interface roughness.Keywords
This publication has 9 references indexed in Scilit:
- Charge control and mobility in AlGaN/GaN transistors: Experimental and theoretical studiesJournal of Applied Physics, 2000
- Dislocation scattering in a two-dimensional electron gasApplied Physics Letters, 2000
- High electron mobility AlGaN/GaN heterostructures grown on sapphire substrates by molecular-beam epitaxyApplied Physics Letters, 2000
- Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxyJournal of Applied Physics, 1999
- The relation of active nitrogen species to high-temperature limitations for (0001̄) GaN growth by radio-frequency-plasma-assisted molecular beam epitaxyApplied Physics Letters, 1999
- Electron mobility exceeding 104 cm2/V s in an AlGaN–GaN heterostructure grown on a sapphire substrateApplied Physics Letters, 1999
- High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxyApplied Physics Letters, 1999
- Electron mobility inheterostructuresPhysical Review B, 1997
- Growth of gallium nitride by hydride vapor-phase epitaxyJournal of Crystal Growth, 1997