High-temperature CW operation of planar buried-ridge structure lasers at λ = 1.5μm
- 4 August 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 24 (16) , 992-993
- https://doi.org/10.1049/el:19880675
Abstract
GaInAsP/InP-PBRS lasers emitting at l.5μm have been fabricated by multiple liquid-phase epitaxy. Effective current confinement is achieved without current blocking layers. CW threshold current is as low as 9 mA at 25°C. Output powers per facet of up to 10mW at 80°C and 3.5 mW at 100°C are obtained. The maximum operation temperature of 110°C is the highest value yet achieved with this type of laser at 1.5μm.Keywords
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