Growth and characterization of Ga2Se3 by molecular beam epitaxy
- 1 December 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 115 (1-4) , 798-801
- https://doi.org/10.1016/0022-0248(91)90848-y
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Structure of the ZnSe/GaAs heteroepitaxial interfaceApplied Physics Letters, 1990
- Growth of III-VI Compound Semiconductors by Metalorganic Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1989
- ZnSe– and Se–GaAs interfacesJournal of Vacuum Science & Technology A, 1985
- The ordered crystal structure of In2Te3Journal of the Less Common Metals, 1959