Quantitative TDS absorption corrections for LACBED patterns from GaP and InAs
- 1 February 1992
- journal article
- Published by Elsevier in Ultramicroscopy
- Vol. 40 (2) , 109-119
- https://doi.org/10.1016/0304-3991(92)90053-m
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Absorptive potentials due to ionization and thermal diffuse scattering by fast electrons in crystalsPhysical Review B, 1990
- Quantitative absorption corrections for electron diffraction: Correlation between theory and experimentUltramicroscopy, 1990
- Absorptive form factors for high-energy electron diffractionActa Crystallographica Section A Foundations of Crystallography, 1990
- Interpretation of dynamical diffuse scattering of fast electrons in rutileActa Crystallographica Section A Foundations of Crystallography, 1985
- Complex lattice potentials in electron diffraction calculated for a number of crystalsActa Crystallographica Section A, 1970
- Absorption coefficients for Al 111 systematics: theory and comparison with experimentActa Crystallographica Section A, 1970
- Absorption parameters in electron diffraction theoryPhilosophical Magazine, 1968
- Relativistic Hartree–Fock X-ray and electron scattering factorsActa Crystallographica Section A, 1968
- Scattering factors computed from relativistic Dirac–Slater wave functionsActa Crystallographica, 1965
- Theorie der Beugung von Elektronen an KristallenAnnalen der Physik, 1928