Transient modulated photocurrent studies in hydrogenated amorphous silicon: a new look at defect relaxation dynamics
- 1 October 1995
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 190 (1-2) , 123-132
- https://doi.org/10.1016/0022-3093(95)00265-0
Abstract
No abstract availableThis publication has 28 references indexed in Scilit:
- Trapping and recombination via dangling bonds in amorphous and glassy semiconductors under steady-state conditions: Application to the modulated photocurrent experimentPhysical Review B, 1993
- Measured and calculated distributions of deep defect states in hydrogenated amorphous silicon: Verification of deep defect relaxation dynamicsPhysical Review Letters, 1993
- Gap-states and their capture-cross-section distribution in a-Si:H studied by frequency-resolved photocurrent spectroscopyJournal of Non-Crystalline Solids, 1991
- An evaluation of phase-shift analysis of modulated photocurrentsPhilosophical Magazine Part B, 1990
- Spatially resolved and energy-resolved defect kinetics ina-Si:H: A comprehensive study by phase-shift analysis of modulated photocurrentsPhysical Review B, 1989
- Hole trapping, light soaking, and secondary photocurrent transients in amorphous siliconPhysical Review B, 1989
- A multiple-trapping model with optical biasPhilosophical Magazine Part B, 1985
- Transient-photocurrent study of localized states at the conduction-band edge of a-Si: HPhilosophical Magazine Part B, 1985
- Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopyPhysical Review B, 1982
- Phase-shift analysis of modulated photocurrent: Its application to the determination of the energetic distribution of gap statesJournal of Applied Physics, 1981