Photocollection efficiency and interface charges of MBE-grown abrupt p (GaAs) -N (Al0.33Ga0.67As) heterojunctions
- 15 October 1978
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (8) , 749-751
- https://doi.org/10.1063/1.90527
Abstract
The photocollection efficiency of abrupt p (GaAs) ‐N (AlxGa1−xAs) heterojunctions is found to be far too large to be compatible with the unmodified Shockley‐Anderson model. The results are interpreted by postulating a positive interface charge density σ≃6×1011 cm−2.Keywords
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