Electronic structure of InAs/GaAs self-assembled quantum dots
- 15 July 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 54 (4) , R2300-R2303
- https://doi.org/10.1103/physrevb.54.r2300
Abstract
The electronic properties of the self-assembled InAs/GaAs quantum dots are investigated theoretically. In our calculation the microscopic distribution of the strain, valence-band mixing, and the shape of the conduction band of InAs with strain are fully taken into account. New states are brought to light and their status in the framework of established approximate models of the electronic structure is critically examined.Keywords
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