Linearity of unshielded spin-valve sensors
- 27 January 1997
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (4) , 523-525
- https://doi.org/10.1063/1.118313
Abstract
Linearity of the magnetoresistive (MR) transfer curve for an unshielded spin-valve (SV) sensor was studied. When the NiFe free layer thickness is greater than 5.0 nm, the anisotropic magnetoresistive (AMR) effect in it may overlap the giant magnetoresistive effect of the SV structure and deteriorate the linearity of the sensor response. By using a bilayer of NiFe/NiFeTa as the free layer for suppressing the AMR effect, superior linearity was obtained without a loss of the MR ratio. This new SV structure shows 5.0% as the MR ratio and −32.1 dB as second harmonic distortion, compared to −19.5 dB for a conventional one.Keywords
This publication has 2 references indexed in Scilit:
- Design and operation of spin valve sensorsIEEE Transactions on Magnetics, 1994
- Design, fabrication and testing of spin-valve read heads for high density recordingIEEE Transactions on Magnetics, 1994