Formation of Oxygen Dimers in Silicon during Electron-Irradiation Above 250 °C

• 1 December 1997
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 258-263, 367-372
• https://doi.org/10.4028/www.scientific.net/msf.258-263.367

Abstract

Keywords

• DEFECT
• ELECTRON IRRADIATION
• OXYGEN DIMER
• SILICON
• THERMAL DONOR