A high-speed, high-sensitivity silicon lateral trench photodetector
- 7 August 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 23 (7) , 395-397
- https://doi.org/10.1109/led.2002.1015212
Abstract
We report a novel silicon lateral trench photodetector that decouples the carrier transit distance from the light absorption depth, enabling both high speed and high responsivity. The photodetector, fabricated with fully VLSI compatible processes, exhibits a 6-dB bandwidth of 1.5 GHz at 3.0 V and an external quantum efficiency of 68% at 845 nm wavelength. A photoreceiver with a wire-bonded lateral trench detector and a BiCMOS transimpedance amplifier demonstrates excellent operation at 2.5 Gb/s data rate and 845 nm wavelength with only a 3.3 V bias.Keywords
This publication has 10 references indexed in Scilit:
- A CMOS-compatible high-speed silicon lateral trench photodetectorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Multi Gbit/s, high-sensitivity all silicon 3.3V optical receiver using PIN lateral trench photodetectorPublished by Optica Publishing Group ,2001
- High sensitivity, low voltage silicon photodetectors compatible with silicon integrationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2001
- Resonant-cavity-enhanced high-speed Si photodiode grown by epitaxial lateral overgrowthIEEE Photonics Technology Letters, 1999
- Design and implementation of high-speed planar Si photodiodes fabricated on SOI substratesIEEE Journal of Quantum Electronics, 1999
- Bandwidth enhancement in silicon metal-semiconductor-metal photodetector by trench formationIEEE Photonics Technology Letters, 1996
- A VLSI-compatible high-speed silicon photodetector for optical data link applicationsIEEE Transactions on Electron Devices, 1996
- 140-GHz metal-semiconductor-metal photodetectors on silicon-on-insulator substrate with a scaled active layerApplied Physics Letters, 1994
- A simple high-speed Si Schottky photodiodeIEEE Photonics Technology Letters, 1991
- Avalanche gain in GexSi1-x/Si infrared waveguide detectorsIEEE Electron Device Letters, 1986