Model of threshold-voltage fluctuations in GaAs MESFET's

1 January 1987

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 8 (1) , 16-18
https://doi.org/10.1109/EDL.1987.26535

Abstract

Due to an increased concentration of Ga vacancies near dislocations, local higher carrier activation of amphoteric implanted Si ions can occur. A quantitative relation between carrier activation and the distance between the device and dislocation is proposed. Monte-Carlo calculations of threshold-voltage fluctuations versus dislocation density are made, and are compared with available data.

Keywords

FLUCTUATIONS
GALLIUM ARSENIDE
MESFETS
THRESHOLD VOLTAGE
SIMULATED ANNEALING
SOLIDS
SEMICONDUCTOR DEVICE MEASUREMENT
SHAPE
SEMICONDUCTOR DEVICE MODELING
TEMPERATURE SENSORS

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