Photoluminescent and electroluminescent properties of GaAs1−xPx-GaAs1−yPy isotype heterojunction electrodes

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Abstract
The photoluminescence (PL) of N‐n GaAs0.59P0.41‐GaAs0.70P0.30 heterojunction electrodes has been studied in stable, efficient photoelectrochemical cells employing aqueous ditelluride electrolyte. When excited at several ultra‐band‐gap wavelengths, electrodes whose surface n‐GaAs0.70P0.30 layers are ∼0.2 μm thick exhibit PL spectra derived from the emission bands of the heterojunction constituents. Besides being dependent on excitation wavelength, the PL spectral distribution is a function of applied potential. Field‐induced quenching of PL from the electrodes is shown to be consistent with a dead‐layer model. Electroluminescence (EL) can be observed when the solids are used as cathodes in a formamide solution of Na2S2O8. The EL spectrum indicates that radiative recombination due to hole injection is largely confined to the surface layer.