Sweep-Out Effects in Hg1−xCdxTe Photoconductors

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Abstract
Sweep out of minority-carrier holes in n-type HgCdTe with a band gap of 0.26 eV at 150 K has been observed. Both the photocurrent and the generation-recombination noise current are observed to saturate with increasing electric field. Further, the noise current decreases at the highest fields by ≈2 from its peak value. This is interpreted as the minority-carrier shot noise current which obtains in the absence of recombination. The signal-to-noise ratio is found to increase in the sweep-out region, although by somewhat more than the (32)1/2 predicted by theory.