HEMT Low-Noise Amplifier for Ka-Band

1 January 1987

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

Vol. 2 (0149645X) , 1007-1010
https://doi.org/10.1109/mwsym.1987.1132594

Abstract

Using 0.25 micron gate-length High Electron Mobility Transistors (HEMTs), a two-stage amplifier has been developed that demonstrates the potential for high-gain, low-noise pre-amplification at K/sub a/ -band. The amplifier exhibits a noise figure of 4.0 dB with 16.5 dB gain at 37.5 GHz and under slightly different bias conditions shows flat gain of around 11.0 dB from 30.5-37.5 GHz.

Keywords

HEMTS
LOW-NOISE AMPLIFIERS
NOISE FIGURE
NOISE MEASUREMENT
GAIN MEASUREMENT
FREQUENCY MEASUREMENT
MILLIMETER WAVE RADAR
MILLIMETER WAVE TRANSISTORS
RADAR ANTENNAS
ASSEMBLY

This publication has 3 references indexed in Scilit:

94 GHz transistor amplification using an HEMT
Electronics Letters, 1986
60 GHz low-noise high-electron-mobility transistors
Electronics Letters, 1986
Design of Microwave GaAs MESFET's for Broad-Band Low-Noise Amplifiers
IEEE Transactions on Microwave Theory and Techniques, 1979