Chemical Vapor Deposition of Hydrogen-Free Silicon-Dioxide Films
- 1 March 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (3S)
- https://doi.org/10.1143/jjap.36.1509
Abstract
A new source gas mixture of Si(NCO)4 and N(CH3)3 has been investigated for low-temperature chemical vapor deposition of silicon dioxide. Hydrogen-free films have been successfully deposited at 200° C for the first time. Evaluated results are also presented for deposition characteristics and deposited film properties. The breakdown-field strength and low-field resistivity were as high as 5.9 MV/cm and 6×1016 Ωcm, respectively, for the as-deposited film.Keywords
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