Barrier height change of Pt/Cr/n-GaAs Schottky contacts due to heat treatments
- 31 March 1979
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 22 (3) , 347-348
- https://doi.org/10.1016/0038-1101(79)90045-5
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- GaAs MESFET logic with 4-GHz clock rateIEEE Journal of Solid-State Circuits, 1977
- n-GaAs Schottky diodes metallized with Ti and Pt/TiSolid-State Electronics, 1976
- The Richardson constant for thermionic emission in Schottky barrier diodesSolid-State Electronics, 1965