Novel RiS-type InGaN MQW laser diodes on FIELO GaN substrates
- 9 July 2001
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
Abstract
A novel ridge structure fabricated by selective-area epitaxial growth is proposed for InGaN MQW laser diodes (LDS). This technique is capable of precisely controlling the active ridge width and height, thus enabling stable single transverse-mode operation. Together with a backside n-contact on a low-dislocation-density GaN substrate, this structure provides high productivity and performance for GaN-based blue-violet LDs. The LDs fabricated by this technique have achieved continuous-wave operation at more than 30 mW up to a temperature of 90 degrees C, with a characteristic temperature T0 of 105 K from 20 to 90 degrees C. The laser design and characteristics are discussed in detail.Keywords
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