Vacancy-induced 2 × 2 reconstruction of the Si-terminated 3C SiC(111) surface: ab initio calculations of the atomic and electronic structure
- 1 July 1995
- journal article
- Published by Elsevier in Surface Science
- Vol. 331-333, 1105-1109
- https://doi.org/10.1016/0039-6028(95)00287-1
Abstract
No abstract availableKeywords
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