Monolithic integration of a 3-GHz detector/preamplifier using a refractory-gate, ion-implanted MESFET process

1 November 1986

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 7 (11) , 600-602
https://doi.org/10.1109/edl.1986.26487

Abstract

High-performance interdigitated metal-semiconductor-metal (IMSM) detectors and photoreceivers have been fabricated using a standard refractory-gate, ion-implanted MESFET process which was also used to fabricate complex digital circuits. A rise time of 110 ps has been observed for a detector-preamplifier combination implying a small-signal bandwidth of about 3 GHz. Detector responsivities as high as 0.45 A/W, and dark currents as low as 5 nA have been observed.

Keywords

MONOLITHIC INTEGRATED CIRCUITS
DETECTORS
PREAMPLIFIERS
COUPLING CIRCUITS
IMPLANTS
MESFET CIRCUITS
CIRCUIT NOISE
PHOTODIODES
OPTICAL NOISE
NOISE REDUCTION