Superlattice gate and graded superlattice buffer for microwave power metal–semiconductor field effect transistor grown by molecular-beam epitaxy
- 1 July 1989
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 7 (4) , 589-592
- https://doi.org/10.1116/1.584799
Abstract
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