GaPSb: A new ternary material for Schottky diode fabrication on InP
- 22 July 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (4) , 423-424
- https://doi.org/10.1063/1.105450
Abstract
Despite its excellent transport properties, the low value of the Schottky barrier height on n- type InP (0.43 eV) prevents its use in electronic applications. A new InP lattice- matched material (GaPSb with 65% Sb) has been grown for the first time by gas source molecular beam epitaxy and studied. The material gap is 0.9 eV and the gold Schottky diode reaches 0.6 eV on this compound. This is the highest barrier ever reported on InP lattice-matched materials which do not contain aluminum. Continuous and picosecond luminescence results show that the GaPSb/InP is a type II heterostructure with ΔEc=50 meV at 4 K.Keywords
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