MEMORY BEHAVIOR OF AN MNS CAPACITOR
- 15 April 1968
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 12 (8) , 260-263
- https://doi.org/10.1063/1.1651983
Abstract
The memory behavior of an MNS capacitor caused by high voltage pulses is described. The instantaneous charge transfer during pulsing is measured and analyzed, and the results compared favorably with those from the C‐V measurement. With this technique the charge transfer was found to be essentially insensitive to temperature up to 300°C. By means of step‐etch tests the stored charge was found to be located within 100 Å of the interface. Tunneling is believed to be the conduction mechanism.Keywords
This publication has 1 reference indexed in Scilit:
- The preparation and C-V characteristics of SiSi3N4 and SiSiO2Si3N4 structuresSolid-State Electronics, 1967