Growth of wide band gap polycrystalline semi-insulating polycrystalline silicon
- 1 January 1990
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 8 (1) , 16-20
- https://doi.org/10.1116/1.584858
Abstract
Semi-insulating polycrystalline silicon (SIPOS) films have been grown by low-pressure chemical vapor deposition at 590 °C rather than the conventional 650 °C. Three compositions have been achieved; 6.1 at. % of oxygen, 17.7 at. % oxygen, and 26.4 at. % oxygen with 15.3 at. % hydrogen. Films of the first two compositions are amorphous as grown and have properties very similar to known properties of SIPOS. In the last composition, wherein hydrogen is incorporated, the film is polycrystalline as grown with an optical band gap of 2.1 eV, and it has some properties similar to more conventional SIPOS containing 51 at. % oxygen—49 at. % silicon which has been annealed at 900 °C. Upon implantation with a dose of 2×1016 P atoms/cm2 followed by annealing at 1150 °C, conductivities of 5×102 (Ω cm)−1 are possible.This publication has 0 references indexed in Scilit: