Implanted planar GaInAsP/InP hetero-bipolar transistor

23 October 1986

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 22 (22) , 1191-1193
https://doi.org/10.1049/el:19860816

Abstract

Planar GaInAsP/InP hetero-bipolar transistors (HBTs) applicable for integration into optoelectronic integrated circuits (OEICs) have been fabricated. Si and Mg ions have been implanted into an LPE-grown heterostructure on semi-insulating InP to form collector and base contacts. Emitter-up HBTs showed maximum current gains of up to 20000.

Keywords

OPTOELECTRONIC INTEGRATED CIRCUITS
PLANAR IMPLANTED DEVICES
EPITAXIAL GROWTH
III-V SEMICONDUCTORS
OPTICAL COMMUNICATION EQUIPMENT
INP SEMIINSULATING SUBSTRATE
MONOLITHIC IC
GAINASP-INP
HETERO-BIPOLAR TRANSISTOR
LPE-GROWN HETEROSTRUCTURE
DOPANTS
PHOTOTRANSISTORS

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