Back surface gettering and Cr out-diffusion in VPE GaAs layers
- 1 August 1979
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (3) , 277-279
- https://doi.org/10.1063/1.91070
Abstract
Mechanical back surface damage gettering has been investigated for improving the quality of GaAs substrates and VPE layers on semi-insulating GaAs. It has been shown that the pregettering of substrates reduces the interfacial defect density and alters the level of Cr out-diffusion into the VPE layer during growth. At a postdeposition anneal temperature of 800 °C, Cr out-diffusion into the VPE layer is relatively suppressed in the pregettered substrate, while the ungettered sample shows larger concentrations of Cr within the epitaxial layer.Keywords
This publication has 2 references indexed in Scilit:
- Multilayered encapsulation of GaAsJournal of Applied Physics, 1978
- Impurity gettering in semi-insulating gallium arsenide using ion-implantation damageApplied Physics Letters, 1976