Direct Photoelectric Measurement of the Interface-State Density at a Pt-Si Interface
- 8 May 1972
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 28 (19) , 1258-1261
- https://doi.org/10.1103/physrevlett.28.1258
Abstract
From infrared photoelectric measurements, we have obtained a density of the interface states lying between 0.745 and 0.825 eV from the silicon conduction band at a Pt-Si interface. We show the following: The transitions occur preponderantly from a level ∼ 0.3 eV below the platinum Fermi level; a peak exists in the interface-state density at 0.79 eV from the silicon conduction band; and the pseudo Fermi level in the semiconductor moves up with forward bias.Keywords
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