Microstructure Control of (Ba, Sr)TiO3 Films for Gigabit Dram
- 1 January 1997
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- The dielectric response as a function of temperature and film thickness of fiber-textured (Ba,Sr)TiO3 thin films grown by chemical vapor depositionJournal of Applied Physics, 1997
- Leakage currents in Ba0.7Sr0.3TiO3 thin films for ultrahigh-density dynamic random access memoriesJournal of Applied Physics, 1997
- A review of high dielectric materials for DRAM capacitorsIntegrated Ferroelectrics, 1997
- Electrical properties and microstructures of Pt/Ba0.5Sr0.5TiO3/SrRuO3 capacitorsApplied Physics Letters, 1997
- Electrical and Microstructural Degradation with Decreasing Thickness of (Ba, Sr)TiO3 Thin Films Deposited by RF Magnetron SputteringJapanese Journal of Applied Physics, 1996
- High-Permittivity Perovskite Thin Films for Dynamic Random-Access MemoriesMRS Bulletin, 1996
- Distribution of Grown-in Crystal Defects in Silicon Crystals Formed by Point Defect Diffusion during Melt-Growth: Disappearance of the Oxidation Induced Stacking Faults-RingJapanese Journal of Applied Physics, 1996
- Manufacturing of perovskite thin films using liquid delivery MOCVDIntegrated Ferroelectrics, 1995