An empirical pseudopotential analysis of (100) and (110) GaAs-AlxGa1-xAs heterojunctions
- 10 January 1986
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 19 (1) , 43-52
- https://doi.org/10.1088/0022-3719/19/1/011
Abstract
Electron transmission and reflection coefficients are calculated for both (100) and (110) orientated GaAs-AlxGa1-xAs heterojunctions. The excitation amplitudes of evanescent states together with real-space intervalley transfer are presented. Complex band structures at each interface are also calculated. Resonances, characteristic of surface states, are observed at both interfaces. Effective-mass theory, in several of its forms, is discussed in the light of the results.Keywords
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