Effect of Oxygen Co-Doping on the Electronic and Magnetic Properties of Ga[sub (1−x)]Mn[sub x]N
- 1 January 2005
- journal article
- Published by The Electrochemical Society in Electrochemical and Solid-State Letters
- Vol. 8 (1) , G20-G22
- https://doi.org/10.1149/1.1830394
Abstract
It was found that oxygen co-doping at a concentration of 10 atom % in GaMnN films grown by gas-source molecular beam epitaxy under previously determined optimal growth conditions of 3 atom % manganese and a growth temperature of 700°C, did not have an effect on the magnetic properties. Oxygen doping did, however, improve the magnetic properties of films grown under nonoptimal conditions, in accordance with the prediction of Kulatov et al. [Phys. Rev. B, 66, 45203 (2002)]. For all growth conditions examined, oxygen doping greatly decreased the electrical resistivity from highly resistive to Oxygen co-doping was also found to produce substantial improvement in the thermal stability of the GaMnN, allowing for retention of the room temperature ferromagnetic ordering even after annealing at temperatures up to 600°C. © 2004 The Electrochemical Society. All rights reserved.Keywords
This publication has 27 references indexed in Scilit:
- Functional ferromagnetsNature Materials, 2003
- New Materials for SpintronicsMRS Bulletin, 2003
- Ferromagnetic semiconductorsSemiconductor Science and Technology, 2002
- Semiconductor Spintronics and Quantum ComputationPublished by Springer Nature ,2002
- Spintronics: A Spin-Based Electronics Vision for the FutureScience, 2001
- Magnetic and electric properties of transition-metal-doped ZnO filmsApplied Physics Letters, 2001
- Room-Temperature Ferromagnetism in Transparent Transition Metal-Doped Titanium DioxideScience, 2001
- SpintronicsAmerican Scientist, 2001
- Meet the spin doctors …Nature, 2000
- MagnetoelectronicsScience, 1998