High-speed vertical cavity surface emitting lasers
- 22 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
We have previously demonstrated record modulation bandwidths for oxide-confined vertical cavity surface emitting lasers (VCSELs) based on strained InGaAs-GaAs quantum wells. The monolithic oxide-confined structure provides good optical confinement, low thresholds, efficient operation, and acceptable thermal resistance; these qualities promote high speed operation. Here we report work on nominally 850 nm wavelength oxide-confined VCSELs with modulation bandwidths in excess of 20 GHz.Keywords
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